NTMFS006N08MC datasheet(2/7 Pages) ONSEMI

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NTMFS006N08MC

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case – Steady State

RqJC

1.61

°C/W

Junction−to−Ambient – Steady State (Note 4)

RqJA

Junction−to−Ambient – Steady State (Note 5)

RqJA

125

4. Surface−mounted on FR4 board using 1 in2 pad, 2 oz Cu pad.

5. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

ID = 250 mA. ref to 25°C

96.6

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 64 V

TJ = 25°C

1.0

TJ = 125°C

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

2.0

4.0

Threshold Temperature Coefficient

VGS(TH)/TJ

ID = 200 mA. ref to 25°C

−5

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 32 A

4.9

6.0

Drain−to−Source On Resistance

RDS(on)

VGS = 6 V

ID = 16 A

10.2

Gate Resistance

TA = 25°C

0.3

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, VDS = 40 V, f = 1 MHz

2300

Output Capacitance

COSS

710

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 40 V; ID = 32 A

Threshold Gate Charge

QG(TH)

3.3

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

6.0

SWITCHING CHARACTERISTICS (Note 7)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 15 V,

ID = 32 A, RG = 2.5 W

Rise Time

Turn−Off Delay Time

td(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 32 A

TJ = 25°C

0.84

1.2

TJ = 125°C

0.78

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 32 A

49.58

Reverse Recovery Charge

QRR

51.4

6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.

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