BFS520 datasheet(2/7 Pages) YFWDIODE

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BFS520 SOT-323

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www.yfwdiode.com

Dongguan YFW Electronics Co, Ltd.

■

Electrical Characteristics Ta = 25℃

Note. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM 10 log

S21

1 S11

–







 1 S

–









-------------------------------------------------------------- dB.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

2.5

Collector-base cut-off current

ICBO

VCB= 20 V , IE= 0

Emitter cut-off current

IEBO

VEB= 2.5V , IC=0

100

Collector-emitter saturation voltage

VCE(sat) IC= 70 mA, IB=7mA

0.5

Base - emitter saturation voltage

VBE(sat) IC= 70 mA, IB=7mA

1.2

DC current gain

hFE

VCE= 6V, IC= 20mA

250

IC=20mA; VCE=6V; Tamb =25°C; f=0.9GHz

IC=20mA; VCE=6V; Tamb =25°C; f=2GHz

Insertion power gain

|S21|2

IC=20mA; VCE=6V; Tamb =25°C; f=0.9GHz

Gs = Gopt; IC= 5mA; VCE = 6V;

Tamb = 25 °C;f = 0.9GHz

1.6

Gs = Gopt; IC= 20mA; VCE = 6V;

Tamb = 25 °C;f = 0.9GHz

2.1

Gs = Gopt; IC= 5mA; VCE = 6V;

Tamb = 25 °C;f = 2GHz

1.9

Output power at 1 dB gain

compression

PL1

Ic = 20 mA; VCE = 6 V; RL = 50 Ω;

f = 900 MHz; Tamb = 25 °C

Third order intercept point

ITO

(Note.1)

Collector capacitance

VCB= 6V, IE=ie=0,f=1MHz

0.5

Emitter capacitance

VEB= 0.5V, IC=ic=0,f=1MHz

Feedback capacitance

Cre

VCB= 6V, IC=0,f=1MHz

0.4

Transition frequency

VCE= 6V, IC= 20mA,f=1GHz,Tamb =25°C

GHz

dBm

Maximum unilateral power gain

GUM

Noise figure

Note.1 IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;

fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz.

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