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CS7N65A5-R 数据表(PDF) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

部件名 CS7N65A5-R
功能描述  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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制造商  YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]
网页  http://www.yfwdiode.com/
标志 YFWDIODE - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

CS7N65A5-R 数据表(HTML) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

  CS7N65A5-R Datasheet HTML 1Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD CS7N65A5-R Datasheet HTML 2Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD CS7N65A5-R Datasheet HTML 3Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD CS7N65A5-R Datasheet HTML 4Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD CS7N65A5-R Datasheet HTML 5Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD CS7N65A5-R Datasheet HTML 6Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD  
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N-CHANNEL MOSFET
CS7N65A
2 / 6
www.yfwdiode.com
Dongguan YFW Electronics Co, Ltd.
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Symbols
Value
Units
220AB/263
220F
251/252
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
V
Continue Drain Current
ID
7
A
Pulsed Drain Current (Note1)
IDM
28
A
Power Dissipation
PD
100
35
100
W
Single Pulse Avalanche Energy (Note1)
EAS
350
mJ
Operating Temperature Range
TJ
150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Thermal Resistance, Junction to Case
RθJC
1.25
3.57
1.25
°C/W
Thermal Resistance, Junction to Ambient
RθJA
62.5
62.5
100
°C/W
Note1:Pulse test: 300 μs pulse width, 2 % duty cycle
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Test Condition
Symbols
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V,ID = 250 μA
BVDSS
650
680
-
V
Drain-Source Leakage Current
VDS = 650 V, VGS = 0 V
IDSS
-
-
1
UA
Gate Leakage Current
VGS = ±30 V, VDS = 0 V
IGSS
-
-
±100
nA
Gate-Source Threshold Voltage
VDS = VGS , ID = 250 μA
VGS(th)
2
-
4
V
Drain-Source On-State Resistance
VGS = 10 V, ID = 3.5 A
RDS(on)
-
1.06
1.4
Ω
Forward Transconductance
VDS = 15 V, ID = 3.5 A
gfs
-
6.5
-
S
Input Capacitance
VGS = 0 V, VDS = 2 V,
f = 200 KHz
Ciss
-
1334
-
pF
Output Capacitance
Coss
-
92
-
pF
Reverse Transfer Capacitance
Crss
-
5
-
pF
Turn-on Delay Time(Note2)
ID = 7 A, VDD = 325 V,
RG= 10Ω
td(ON)
-
18
-
nS
Rise Time(Note2)
tr
-
19
-
nS
Turn-Off Delay Time(Note2)
td(OFF)
-
39
-
nS
Fall Time(Note2)
tf
-
18
-
nS
Total Gate Charge(Note2)
ID = 7 A, VDD = 520 V,
VGS = 10 V
QG
-
23
-
nC
Gate to Source Charge(Note2)
QGS
-
5
-
nC
Gate to Drain Charge(Note2)
QGD
-
9
-
nC
Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified
Characteristics
Test Condition
Symbols
Min
Typ
Max
Units
Maximun Body-Diode Continuous Current
Tj=25°C
IS
-
-
7
A
Maximun Body-Diode Pulsed
Current(Note2)
ISM
-
-
28
A
Drain-Source Diode Forward Voltage
ISD = 7 A
VSD
-
-
1.4
V
Reverse Recovery Time(Note2)
ISD = 7 A, VGS = 0 V,
dIF / dt = 100 A/μs
trr
-
370
-
nS
Reverse Recovery Charge(Note2)
Qrr
-
1.9
-
uC
Note2:Pulse test: 300 μs pulse width, 2 % duty cycle



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