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DS15 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 DS15
功能描述  isc Silicon NPN Power Transistors
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

DS15 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  DS15 Datasheet HTML 1Page - Inchange Semiconductor Company Limited DS15 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
DS15
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·
Fast Switching Speeds
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
100
V
VCBO
Collector-Base Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
PC
Collector Power Dissipation
@TC=25℃
65
W
Tj
Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.92
℃
/W


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