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ISCN227E 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN227E 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  1 isc Website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ISCN227E DESCRIPTION · Collector–Emitter Sustaining Voltage— : VCEO(SUS) ≥ 30 V · DC Current Gain— : hFE = 50(Min) @ IC= 0.5 A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Low power audio amplifier · Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 2 A ICM Collector Current-peak 4 A IB Base Current 1 A PC Collector Power Dissipation Ta=25℃ 10 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 12.5 ℃ /W |
类似零件编号 - ISCN227E |
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类似说明 - ISCN227E |
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