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ISCN18165 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN18165 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCN18165 · FEATURES · Static drain-source on-resistance: RDS(on)≤170mΩ · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Fast switching · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 120 A PD Total Dissipation @TC=25℃ 214 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.7 ℃ /W |
类似零件编号 - ISCN18165 |
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类似说明 - ISCN18165 |
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