STL80NF3LL datasheet(2/9 Pages) STMICROELECTRONICS

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STL80NF3LL

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Table 3: Absolute Maximum ratings

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On /Off

Table 6: Dynamic

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS= 0)

VGS

Gate- source Voltage

± 16

ID (1)

Drain Current (continuous) at TC= 25°C

ID (1)

Drain Current (continuous) at TC= 100°C

IDM (3)

Drain Current (pulsed)

320

ID (2)

Drain Current (continuous) at TC= 25°C

PTOT (2)

Total Dissipation at TC= 25°C

PTOT (1)

Total Dissipation at TC= 25°C

Derating Factor(2)

0.03

W/°C

Tstg

Storage Temperature

– 55 to 150

°C

Max. Operating Junction Temperature

Rthj-C

Thermal Resistance Junction-Case (Drain)

1.56

°C/W

Rthj-pcb (2)

Thermal Operating Junction-pcb

31.3

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source Breakdown

Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

± 10

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= 250µA

RDS(on)

Static Drain-source On

Resistance

VGS= 10 V, ID= 10 A

0.0045

0.0055

VGS= 4.5 V, ID= 10 A

0.0055

0.007

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (4)

Forward Transconductance

VDS= 10V, ID= 10 A

Ciss

Input Capacitance

VDS= 25V, f= 1 MHz, VGS= 0

2160

Coss

Output Capacitance

614

Crss

Reverse Transfer

Capacitance

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

4.1

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