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MPS2222A 数据表(PDF) 3 Page - ON Semiconductor |
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MPS2222A 数据表(HTML) 3 Page - ON Semiconductor |
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3 / 8 page ![]() MPS2222, MPS2222A http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (Note 2.) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MPS2222 MPS2222A fT 250 300 – – MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MPS2222 MPS2222A Cibo – – 30 25 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A hie 2.0 0.25 8.0 1.25 k Ω Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A hre – – 8.0 4.0 X 10–4 Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A hfe 50 75 300 375 – Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS2222A hoe 5.0 25 35 200 mmhos Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MPS2222A rb ′Cc – 150 ps Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MPS2222A NF – 4.0 dB SWITCHING CHARACTERISTICS MPS2222A only Delay Time (VCC = 30 Vdc, VBE(off) = –0.5 Vdc, td – 10 ns Rise Time (VCC 30 Vdc, VBE(off) 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr – 25 ns Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts – 225 ns Fall Time (VCC 30 Vdc, IC 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) tf – 60 ns 2. fT is defined as the frequency at which |hfe| extrapolates to unity. Figure 1. Turn–On Time Figure 2. Turn–Off Time SWITCHING TIME EQUIVALENT TEST CIRCUITS Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. +16 V -2 V < 2 ns 0 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1 kΩ +30 V 200 CS* < 10 pF +16 V -14 V 0 < 20 ns 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1 k +30 V 200 CS* < 10 pF -4 V 1N914 |
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