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TEA2208T 数据表(PDF) 1 Page - NXP Semiconductors

部件名 TEA2208T
功能描述  Active bridge rectifier controller
PDF  17 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

TEA2208T 数据表(HTML) 1 Page - NXP Semiconductors

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TEA2208T
Active bridge rectifier controller
Rev. 1.1 — 25 March 2020
Product data sheet
1 General description
The TEA2208T is the first product of a new generation of active bridge rectifier controllers
replacing the traditional diode bridge.
Using the TEA2208T with low-ohmic high-voltage external MOSFETs significantly
improves the efficiency of the power converter as the typical rectifier diode-forward
conduction losses are eliminated. Efficiency can improve up to about 1.4 % at 90 V (AC)
mains voltage.
The TEA2208T is designed in a silicon-on insulator (SOI) process.
2 Features and benefits
2.1 Efficiency features
Forward conduction losses of the diode rectifier bridge are eliminated
Very low IC power consumption (2 mW).
2.2 Application features
Integrated high-voltage level shifters
Directly drives all four rectifier MOSFETs
Very low external part count
Integrated X-capacitor discharge (2 mA)
Self-supplying
Full-wave drive improving total harmonic distortion (THD)
S014 package
2.3 Control features
Undervoltage lockout (UVLO) for high-side and low-side drivers
Drain-source overvoltage protection for all external power MOSFETs
Gate pull-down currents at start-up for all external power MOSFETs


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