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TEA2208T 数据表(PDF) 1 Page - NXP Semiconductors |
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TEA2208T 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 17 page ![]() TEA2208T Active bridge rectifier controller Rev. 1.1 — 25 March 2020 Product data sheet 1 General description The TEA2208T is the first product of a new generation of active bridge rectifier controllers replacing the traditional diode bridge. Using the TEA2208T with low-ohmic high-voltage external MOSFETs significantly improves the efficiency of the power converter as the typical rectifier diode-forward conduction losses are eliminated. Efficiency can improve up to about 1.4 % at 90 V (AC) mains voltage. The TEA2208T is designed in a silicon-on insulator (SOI) process. 2 Features and benefits 2.1 Efficiency features • Forward conduction losses of the diode rectifier bridge are eliminated • Very low IC power consumption (2 mW). 2.2 Application features • Integrated high-voltage level shifters • Directly drives all four rectifier MOSFETs • Very low external part count • Integrated X-capacitor discharge (2 mA) • Self-supplying • Full-wave drive improving total harmonic distortion (THD) • S014 package 2.3 Control features • Undervoltage lockout (UVLO) for high-side and low-side drivers • Drain-source overvoltage protection for all external power MOSFETs • Gate pull-down currents at start-up for all external power MOSFETs |
类似零件编号 - TEA2208T |
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类似说明 - TEA2208T |
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