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1

Low Noise Amplifier for GPS

PLG01

Products and product information are subject to change without notice. Version 0.3

3

6

1

4

2

5

Parameters

Units

Frequency (MHz)

1250

1575

2450

S21

dB

31.9

28.9

22.0

S11

dB

-25.6

-20.3

-22.4

S22

dB

-23.2

-25.6

-17.1

P1dB

dBm

14.2

14.5

13.1

dBm

15.2

13.6

13.3

dB

0.97

0.92

1.06

V/I

V/mA

3/8.8

Rth

°C/W

31

Description

The LNA is a high performance GaAs p-HEMT Amplifier. The

features are high linear performance, low noise figure, low power

consumption and high reliability. The LNA can be easily matched to

obtain optimum noise figure and gain. The LNA operates from a

single 3 voltage supply and has an internal active bias. The low noise

figure and high gain, coupled with low current consumption make it

suitable for use in critical low-power GPS application or during low-

batterysituations. Alldevicesare100% RFandDCtested.

Specifications

1) TestConditions :T=25°C, SupplyVoltage=3V, 50ohmSystem

2) OIP3measured withtwotonesatanoutput powerof-10dBm/tone separatedby1MHz.

3) NFincludestheEvaluation BoardLoss.

Absolute Maximum Ratings

Parameter

Rating

Unit

DeviceVoltage

8

V

DeviceCurrent

29

mA

RFPowerInput

20

dBm

StorageTemperature

-55to150

°C

AmbientOperatingTemperature

-40to85

°C

JunctionTemperature

185

°C

Features

•

1000 –2500 MHz

•

Gain 28.9dB @1575MHz

•

NF 0.92 dB@1575MHz

•

P1dB 14.5dBm @1575MHz

•

OIP3 13.6dBm @1575MHz

•

Lead-free/Green/

compliant SOT-363Package

Applications

•

High GainGPS(BEIDOU,

GLONASS,GALILEO)Receivers

•

ISMandWiMAX LNAs

•

WLAN

1) Operationofthisdeviceaboveanyoftheseparameters maycausepermanent damage.

2) MTTFismorethan 100years.

Functional Diagram

RF IN 3

RF OUT 6

Bias

GND

4

1,2,5

ESD/MSL

1

ESDsensitive device. Observe

handling precautions.

2 HBM:Class1C ,JS-001-2014

3 CDM:ClassC3,JESD22-C101F

4 MSL 3,J-STD-020