25XX080A/B

DS21808B-page 2

 2003 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

V

All inputs and outputs w.r.t. V

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-65°C to 125°C

ESD protection on all pins ..........................................................................................................................................4 kV

TABLE 1-1:

DC CHARACTERISTICS

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I):

T

V

Automotive (E): T

V

Param.

No.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

D001

V

IH1

High-level input

voltage

2.0

V

V

V

CC

≥ 2.7V (Note)

D002

V

IH2

0.7 V

CC

V

V

V

D003

V

IL1

Low-level input

voltage

-0.3

0.8

V

V

CC

≥ 2.7V (Note)

D004

V

IL2

-0.3

0.2 V

CC

VV

D005

V

OL

Low-level output

voltage

—0.4

V

I

D006

V

OL

—0.2

V

I

D007

V

OH

High-level output

voltage

V

—

V

I

µA

D008

I

LI

Input leakage current

±1

D009

I

LO

Output leakage

current

±1

D010

C

INT

Internal Capacitance

(all inputs and

outputs)

—

7

pF

T

V

D011

I

Operating Current

—

—

6

2.5

mA

mA

V

SO = Open

V

SO = Open

D012

I

—

—

3mA

V

D013

Iccs

Standby Current

—

—

5

1

µA

µA

CS = V

V

CS = V

V

Note:

This parameter is periodically sampled and not 100% tested.