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ADL6012ACPZN-R7 数据表(PDF) 19 Page - Analog Devices |
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ADL6012ACPZN-R7 数据表(HTML) 19 Page - Analog Devices |
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19 / 24 page ![]() Data Sheet ADL6012 Rev. 0 | Page 19 of 24 THEORY OF OPERATION The ADL6012 uses Schottky diodes in a two path detector topology. One path responds during the positive half cycles of the input, and the other responds during the negative half cycles of the input, achieving full wave signal detection. This arrangement presents a constant input impedance throughout the full RF cycle, preventing the reflection of even order harmonic distortion components back toward the source. This reflection is a well known phenomenon of widely used, traditional, single- Schottky diode detectors. Detector response time at lower RF frequencies is also improved with symmetrical detection. The diodes are arranged on the chip to minimize the effect of chip stresses and temperature variations. The diodes are biased by small, keep alive currents chosen in a trade-off between the inherently low sensitivity of a diode detector and the need to preserve envelope bandwidth. Therefore, the corner frequency of the front-end, low-pass filtering is a weak function of the input level. At low input levels, the −3 dB corner frequency is at approximately 2 GHz. DC voltages at the RFIN pin (Pin 3) are blocked by an on-chip capacitor. The two RFCM ground pins, Pin 2 and Pin 4, on either side of RFIN form part of an RF coplanar waveguide (CPWG) launch into the detector. The RFCM pins must be connected to the signal ground. Give careful attention to the design of the PCB in this area. The output stage impedance is 100 Ω differential with propagation delay under 1 ns, and an envelope bandwidth over 500 MHz. The differential outputs, VENV+ and VENV− (Pin 8 and Pin 9, respectively) provide the high speed envelope information for both the positive and negative cycles of the RF input signal. BASIC CONNECTIONS The basic connections are shown in Figure 59. A dc supply of nominally 3.3 V to 5 V is required. The bypass capacitors (C2 and C3) provide supply decoupling for the device. Place these capacitors as close as possible to VPOS (Pin 5). The exposed pad is internally connected to the IC ground and must be soldered down to a low impedance ground on the PCB. OCOM (Pin 6) is the output common. Connect OCOM to a low impedance ground plane together with the exposed pad. DCPL (Pin 10) is connected to an internal bias node. Place a 0.1 µF capacitor to ground for the best common-mode noise rejection. RFIN ENBL RFCM RFIN EPAD DCPL VENV+ VENV– VENV+ VENV– 0.1µF 0.1µF 1 2 10 9 8 ADL6012 3 RFCM VPOS VOCM OCOM 4 7 6 5 C3 100pF C2 1µF C1 0.1µF +5V +5V Figure 59. Basic Connections RF INPUT The RFIN single-ended input is internally terminated and internally ac-coupled. No external matching is required up to 67 GHz. The simplified input stage is shown in Figure 60. The input trace can be directly routed with CPWG with ground on both sides of the signal trace shown in Figure 65 and Figure 66. Broadband response is achieved with small vias on both sides of the signal trace and microwave dielectric material. The trace width, gap, and dielectric thickness for the CPWG is designed to the characteristic impedance of 50 Ω to ensure the broadband matching is achieved for the best frequency flatness. The RFCM pins are the ground return to the RF input. It is critical that these pins are connected to the low impedance ground plane, and serve as ground for the CPWG. RFCM RFIN 200Ω ENVELOPE – + 200Ω RFCM Figure 60. Input Stage |
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