 2017 Microchip Technology Inc.

DS20005697A-page 1

TC6320

Features

• Integrated Gate-to-source Resistor

• Integrated Gate-to-source Zener Diode

• Low Threshold

• Low On-resistance

• Low Input Capacitance

• Fast Switching Speeds

• Free from Secondary Breakdown

• Low Input and Output Leakage

• Independent Electrically Isolated N-channel and

P-channel

Applications

• High-voltage Pulsers

• Amplifiers

•Buffers

• Piezoelectric Transducer Drivers

• General Purpose Line Drivers

• Logic-level Interfaces

General Description

The TC6320 consists of high-voltage, low-threshold

N-channel and P-channel MOSFETs in 8-lead SOIC

and DFN packages. Both MOSFETs have integrated

gate-to-source resistors and gate-to-source Zener

diode clamps which are desired for high-voltage pulser

applications. It is a complimentary, high-speed,

high-voltage, gate-clamped N-channel and P-channel

MOSFET pair, which utilizes an advanced vertical

DMOS structure and a well-proven silicon gate

manufacturing process. This combination produces a

device with the power handling capabilities of bipolar

transistors and with the high input impedance and

positive temperature coefficient inherent in MOS

devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally

induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance

and fast switching speeds are desired.

Package Type

8-lead SOIC

(Top view)

See Table 2-1 and Table 2-2 for pin information.

8

7

6

5

1

2

3

4

SN

GN

SP

GP

DN

DN

DP

DP

5-lead DFN

(Top view)

8

7

6

5

1

2

3

4

SN

GN

GP

SP

DN

DN

DP

DP

DN

DP

s

N-Channel and P-Channel Enhancement-Mode MOSFET Pair