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CSA950 数据表(PDF) 2 Page - Rectron Semiconductor |
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CSA950 数据表(HTML) 2 Page - Rectron Semiconductor |
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2 / 2 page ![]() Characteristics Ratings (at Ta = 25°C unless otherwise specified) * Pulse Condition: Width < 300mS, Duty Cycle < 2% Symbol Test Conditions min. Typ. max. Unit Collector Emitter Voltage VCEO IC = 10mA, IB=0 30 V Collector Cut off Current ICBO VC = 35V, IE=0 0.1 µA Emitter Cut off Current IEBO VEB = 5V, IC=0 0.1 µA DC Current Gain hFE (1) VCE = 1V, IC = 100mA 100 320 hFE (2) VCE = 1V, IC = 700mA 35 Collector Emitter Saturation Voltage VCE (SAT)*IC = 500mA, IB = 20mA 0.7 V Base Emitter on Voltage VBE (on) VCE = 5V, IC = 10mA 0.5 0.8 Transition Frequency fT IC = 10mA, VCE=5V 120 MHz Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz 19 pF |
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