P0420HDB datasheet(1/8 Pages) UNIKC

部件名	P0420HDB

功能描述	N-Channel Enhancement Mode MOSFET

PDF	8 Pages

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制造商	UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]

网页	http://www.unikc.com.cn/

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P0420HDB

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

THERMAL RESISTANCE RATINGS

UNITS

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed.

3V

DD = 50V , L = 1mH ,starting TJ = 25°

C

Junction-to-Ambient

RqJA

TC = 100 °C

Power Dissipation

Tj, Tstg

Avalanche Energy

3

Operating Junction & Storage Temperature Range

ID

mJ

14

MAXIMUM

W

IDM

°C / W

TC = 25 °C

35

0.5

62.5

SYMBOL

°C

-55 to 150

Pulsed Drain Current

1,2

Avalanche Current

3

IAS

EAS

ID

TC = 25 °C

200V

Continuous Drain Current

2

TC = 100 °C

PARAMETERS/TEST CONDITIONS

RDS(ON)

0.75Ω @V

GS = 10V

4A

Gate-Source Voltage

Drain-Source Voltage

LIMITS

A

VGS

VDS

V

UNITS

16

SYMBOL

1

200

±20

4

THERMAL RESISTANCE

TYPICAL

PD

2.7

Junction-to-Case

RqJC

3.5

REV 1.0

1

2017/2/8

类似零件编号 - P0420HDB

制造商	部件名	数据表	功能描述
NIKO SEMICONDUCTOR CO.,...	P0420HDB	186Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

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