P0465CS datasheet(2/5 Pages) UNIKC

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P0465CS

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

650

2.5

3.3

4.5

±100

2.1

2.6

mΩ

2.7

527

3.3

4.4

367

2.1

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

UNITS

SYMBOL

Gate-Body Leakage

VGS(th)

Forward Transconductance

VDS =520V, VGS = 0V, TJ = 125°C

VGS = 10V, ID = 2A

Zero Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

Reverse Transfer Capacitance

Ciss

VDS =10V, ID =2A

Input Capacitance

Qgd

VGS = 10V , VDS = 520V , ID = 4A

Output Capacitance

Total Gate Charge

gfs

PARAMETER

Qgs

TEST CONDITIONS

VSD

VDD = 325V,

@ 4A, V

GS = 10V, RGS = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

td(off)

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

V(BR)DSS

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

trr

IF = 4A, VGS = 0V

Fall Time

Gate-Drain Charge

Gate-Source Charge

DYNAMIC

Drain-Source On-State

Resistance

VDS = 650V, VGS = 0V

RDS(ON)

STATIC

Drain-Source Breakdown Voltage

VGS = 0V, VDS = 25V, f = 1MHz

IF = 4A, dlF/dt = 100A / μS

VDS = 0V, VGS = ±30V

IDSS

Coss

Crss

LIMITS

VGS = 0V, ID = 250mA

REV 1.0

2014-3-20

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