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HCS473 数据表(PDF) 51 Page - Microchip Technology |
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HCS473 数据表(HTML) 51 Page - Microchip Technology |
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51 / 68 page ![]() 2002 Microchip Technology Inc. Preliminary DS40035C-page 49 HCS473 7.0 ELECTRICAL CHARACTERISTICS 7.1 Absolute Maximum Ratings † Ambient temperature under bias.......................................................................................................... -40°C to +125°C Storage temperature ........................................................................................................................... -65°C to +150°C Voltage on V DD w/respect to VSS .......................................................................................................... -0.3V to +7.5V Voltage on LED w/respect to V SS .............................................................................................................-0.3V to +11V Voltage on all other pins w/respect to V SS .......................................................................................-0.3V to VDD+0.3V Total power dissipation(1) .................................................................................................................................. 500 mW Maximum current out of V SS pin ........................................................................................................................ 100 mA Maximum current into V DD pin ........................................................................................................................... 100 mA Input clamp current, I IK (VI < 0 or VI > VDD) ....................................................................................................... ±20 mA Output clamp current, I OK (Vo < 0 or Vo >V DD).................................................................................................. ±20 mA Maximum output current sunk by any Output pin................................................................................................. 25 mA Maximum output current sourced by any Output pin ........................................................................................... 25 mA Note 1: Power dissipation is calculated as follows: P DIS=VDD x {IDD - Â IOH} + Â {(VDD-VOH) x IOH} + Â(VOl x IOL). † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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