P0690ATFS datasheet(2/6 Pages) UNIKC

2 / 6 page

P0690ATF / P0690ATFS

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

900

3.4

±100

100

2.35

1610

10.5

190

120

130

1.4

545

3.6

μC

1Pulse test : Pulse Width

 380 msec, Duty Cycle  2％.

2Independent of operating temperature.

3 Pulse width limited by maximum junction temperature.

TEST CONDITIONS

PARAMETER

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Turn-On Delay Time

Turn-Off Delay Time

Fall Time

Input Capacitance

IF = 6A, VGS = 0V

VDD = 450V, ID = 6A, RG = 6Ω

td(on)

td(off)

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

Gate-Source Charge

Reverse Transfer Capacitance

Output Capacitance

Gate-Drain Charge

Total Gate Charge

Forward Transconductance

VGS = 0V, ID = 250mA

V(BR)DSS

Gate Voltage Drain Current

Gate-Body Leakage

VDS = 480V, VGS = 0V, TC = 25 °C

Drain-Source On-State

Resistance

VDS = VGS, ID = 250mA

VGS = 10V, ID = 3A

IDSS

gfs

VDS = 10V, ID = 3A

VDD = 720V, VGS = 10V, ID = 6A

Ciss

Coss

Crss

Qgd

Qgs

VGS = 0V, VDS = 25V, f = 1MHz

IGSS

Drain-Source Breakdown Voltage

VGS(th)

RDS(ON)

VDS = 400V, VGS = 0V , TC = 100 °C

VDS = 0V, VGS = ±30V

SYMBOL

DYNAMIC

STATIC

LIMITS

UNIT

IF = 6A,

dlF/dt = 100A / μS

Gate Threshold Voltage

Rise Time

Ver 1.0

2012/6/14

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