P1020HDB datasheet(1/8 Pages) UNIKC

部件名	P1020HDB

功能描述	N-Channel Enhancement Mode MOSFET

PDF	8 Pages

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制造商	UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]

网页	http://www.unikc.com.cn/

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P1020HDB

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

THERMAL RESISTANCE RATINGS

UNITS

1Pulse width limited by maximum junction temperature.

Drain-Source Voltage

VDS

200

MAXIMUM

±20

10

V

IDM

Pulsed Drain Current

1

VGS

TYPICAL

52

6.3

6.5

ID

PD

TJ, TSTG

SYMBOL

LIMITS

°C

-55 to 150

mJ

W

UNITS

26

A

21.1

20

SYMBOL

Avalanche Current

IAS

Junction-to-Ambient

Junction & Storage Temperature Range

Power Dissipation

EAS

Avalanche Energy

L = 1mH

RDS(ON)

TC = 100 °C

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

325mΩ @V

GS = 10V

10A

ID

200V

Continuous Drain Current

TC = 25 °C

TC = 100 °C

RqJC

RqJA

THERMAL RESISTANCE

°C / W

Junction-to-Case

2.4

62.5

REV 1.0

1

2017/6/9

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NIKO SEMICONDUCTOR CO.,...	P1020HDB	200Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

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