IRFP450 datasheet(1/2 Pages) IXYS

部件名	IRFP450

功能描述	Standard Power MOSFET - N-Channel Enhancement Mode

PDF	2 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 2 page

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C14

A

I

DM

T

C = 25°C, pulse width limited by TJM

56

A

I

AR

14

A

E

AR

T

C = 25°C19

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

3.5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

190

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

6g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD

N-Channel Enhancement Mode

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

500

V

GS(th)

V

DS

= V

GS, ID = 250 µA2

4

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J = 25°C25

µA

V

GS = 0 V

T

J = 125°C

250

µA

R

DS(on)

V

GS

= 10 V, I

D = 8.4 A

0.40

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

IRFP 450

V

DSS

= 500 V

I

D(cont)

= 14 A

R

DS(on) = 0.40 Ω

Ω

G = Gate,

D = Drain,

S = Source,

TAB = Drain

Features

l

International standard packages

l

Low R

DS (on) HDMOS

TM process

l

Rugged polysilicon gate cell structure

l

Low package inductance (< 5 nH)

- easy to drive and to protect

l

Fast switching times

Applications

l

Switch-mode and resonant-mode

power supplies

l

Motor controls

l

Uninterruptible Power Supplies (UPS)

l

DC choppers

Advantages

l

Easy to mount with 1 screw

(isolated mounting screw hole)

l

Space savings

l

High power density

92604E(5/96)

D (TAB)

Standard Power MOSFET

IXYS reserves the right to change limits, test conditions, and dimensions.

类似零件编号 - IRFP450

制造商	部件名	数据表	功能描述
STMicroelectronics	IRFP450	90Kb / 8P	N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET Aug-1998
Samsung semiconductor	IRFP450	212Kb / 5P	N-CHANNEL POWER MOSFETS
Intersil Corporation	IRFP450	55Kb / 7P	14A, 500V, 0.400 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRFP450	169Kb / 6P	Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
Vishay Siliconix	IRFP450	1Mb / 8P	Power MOSFET 16-Jun-08

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类似说明 - IRFP450

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