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IXFN55N50 数据表(PDF) 2 Page - IXYS Corporation |
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IXFN55N50 数据表(HTML) 2 Page - IXYS Corporation |
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2 / 4 page ![]() Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. g fs V DS = 10 V; I D = 0.5 • ID25 Note 1 45 S C iss 9400 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 1280 pF C rss 460 pF t d(on) 45 ns t r V GS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 • ID25 60 ns t d(off) R G = 1 Ω (External), 120 ns t f 45 ns Q g(on) 330 nC Q gs V GS = 10 V, V DS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC Q gd 155 nC R thJC 0.20 K/W R thCK IXFK,IXFX 0.15 K/W R thCK 0.05 K/W Source-Drain Diode (T J = 25°C, unless otherwise specified) Characteristic Values Symbol Test Conditions Min. Typ. Max. I S V GS = 0 55 A I SM Repetitive; 220 A pulse width limited by T JM V SD I F = 100 A, VGS = 0 V Note 1 1.5 V t rr 250 ns Q RM I F = 25 A, -di/dt = 100 A/µs, VR = 100 V 1.0 µC I RM 10 A M4 screws (4x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 miniBLOC (SOT-227B) Outline Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46BSC .215BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Dim. TO-264 AA Outline Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXFK55N50 IXFX55N50 IXFN55N50 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 Terminals: 1 - Gate 2 - Collector PLUS247 Outline |
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