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IXGP10N60 数据表(PDF) 1 Page - IXYS Corporation |
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IXGP10N60 数据表(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 1996 IXYS All rights reserved 91510G (9/96 ) Preliminary data Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. BV CES I C = 250 µA, V GE = 0 V 600 V V GE(th) I C = 250 µA, V CE = VGE 2.5 5 V I CES V CE = 0.8 • V CES T J = 25°C 200 µA V GE = 0 V T J = 125°C1 mA I GES V CE = 0 V, V GE = ±20 V ±100 nA V CE(sat) I C = I C90, VGE = 15 V 10N60 2.5 V 10N60A 3.0 V Features l International standard packages JEDEC TO-263 AA surface mountable and JEDEC TO-247 AD l 2nd generation HDMOSTM process Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages l Space savings, TO-263 AA l Facilitates automated assembly l Reduces assembly time and cost l Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) l High power density G E C (TAB) TO-263 AA (IXGA) E C G G C E TO-247 AD (IXGH) G = Gate, C = Collector, E = Emitter, TAB = Collector C (TAB) Low V CE(sat) IGBT High speed IGBT TO-220AB(IXGP) IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A V CES I C25 V CE(sat) 600 V 20 A 2.5 V 600 V 20 A 3.0 V Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 600 V V CGR T J = 25 °C to 150°C; R GE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25 °C20 A I C90 T C = 90 °C10 A I CM T C = 25 °C, 1 ms 40 A SSOA V GE = 15 V, T VJ = 125°C, RG = 150 Ω I CM = 20 A (RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V CES P C T C = 25 °C 100 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C Maximum Lead and Tab temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s M d Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. Weight TO-263 AA 2 g TO-247 AD 6 g |
类似零件编号 - IXGP10N60 |
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类似说明 - IXGP10N60 |
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