IXGP2N100A datasheet(1/2 Pages) IXYS

部件名	IXGP2N100A

功能描述	High Voltage IGBT

PDF	2 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 2 page

1 = Gate

2 = Collector

3 = Emitter

4 = Collector

TO-220

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min. Typ.

Max.

BV

CES

I

C

= 25µA, V

GE = 0 V

1000

V

GE(th)

I

C

= 25µA, V

CE = VGE

2.5

5.0

V

I

CES

V

CE = 0.8 VCES

T

J

= 25°C

10

µA

V

GE = 0 V

T

J

= 125°C

200

µA

I

GES

V

CE = 0 V, VGE = ±20 V

+ 50 nA

V

CE(sat)

I

C = IC90, VGE = 15 V

IXGP2N100

2.7

V

IXGP2N100A

3.5

V

95514C (9/00)

High Voltage IGBT

Features

International standard package

Low V

CE(sat)

- for low on-state conduction losses

High current handling capability

MOS Gate turn-on

- drive simplicity

Applications

Capacitor discharge

Anode triggering of thyristors

DC choppers

Switched-mode and resonant-mode

power supplies.

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 150°C

1000

V

CGR

T

J

= 25°C to 150°C; R

GE = 1 MW

1000

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C

= 25°C

4

A

I

C90

T

C

= 90°C

2

A

I

CM

T

C

= 25°C, 1 ms

8

A

SSOA

V

GE = 15 V, TJ = 125°C, RG = 150W

I

CM = 6

A

(RBSOA)

Clamped inductive load

@ 0.8 V

CES

P

C

T

C

= 25°C

25

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

STG

-55 ... +150

°C

Weight

4g

Max. Lead Temperature for

300

°C

Soldering (1.6mm from case for 10s)

V

CES

I

C90

V

CE(SAT)

IXGP 2N100 1000 V 2.0 A

2.7 V

IXGP 2N100A 1000 V 2.0 A

3.5 V

1

3

2

4

类似零件编号 - IXGP2N100A

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