PR

EL

M

IN

R

Y

NOTES : 1.Mounted on P.C. board.

2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3.Thermal Resistance Junction to Ambient.

=40 C

RH01 thru RH08

FEATURES

Rating to 800V PRV

Ideal for printed circuit board

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

Fast recovery, low loss switching

The plastic material has UL recognition File # E95060

MECHANICAL DATA

Polarity : Symbol marked on body

Weight : 0.0044 ounces, 0.125 grams

Mounting position : Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

RH01

100

70

100

Maximum Average Forward

Rectified Current (Note 1)

Peak Forward Surge Current

8.3ms single half sine-wave

superimposed on rated load (JEDEC METHOD)

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

MaximumForward Voltage at 0.4A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

0.8

30

1.15

5

100

13

Operating Temperature Range

-55 to +150

C

Storage Temperature Range

-55 to +150

C

Typical Thermal Resistance (Note 3)

75

C/W

pF

uA

V

A

A

V

UNIT

V

V

CHARACTERISTICS

SYMBOL

HDDF

A

C

D

E

F

G

H

B

L

K

J

I

K

M

All Dimensions in millimeter

HDDF

DIM.

MIN.

MAX.

A

C

D

E

F

G

H

B

4.50

4.90

2.70

2.30

7.00

1.60

1.20

3.60

4.00

3.00

2.30

2.70

0.50

0.20

L

K

J

I

0.80

0.35

0.15

1.30

1.70

M

0.70

1.10

5

TYPICAL

RH08

800

560

800

RH04

400

280

400

RH02

200

140

200

Typical Junction Capacitance

per element (Note 2)

SURFACE MOUNT

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 100 to 800 Volts

FORWARD CURRENT - 0.8 Amperes

SEMICONDUCTOR

LITE-ON

Maximum Reverse Recovery Time

150

250

ns

RH06

600

420

600

500

REV. 0, 14-Feb-2001, KBDB02