RN1507

~RN1509

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1507,RN1508,RN1509

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in SMV

(super mini type with 5 leads)With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2507~RN2509

Equivalent Circuit and Bias Resister Values

°°°°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1507~1509

50

V

RN1507

6

RN1508

7

Emitter-base voltage

RN1509

15

V

Collector current

100

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

RN1507~1509

−55~150

°C

* : Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-3L1A

Weight: 0.014g

Unit: mm

Type No.

R1 (kΩ)

R2 (kΩ)

RN1907

10

47

RN1908

22

47

RN1909

47

22