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SM645 数据表(PDF) 2 Page - Microsemi Corporation

部件名 SM645
功能描述  SWITCHING REGULATOR POWER OUTPUT STAGES
PDF  4 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

SM645 数据表(HTML) 2 Page - Microsemi Corporation

  SM645 Datasheet HTML 1Page - Microsemi Corporation SM645 Datasheet HTML 2Page - Microsemi Corporation SM645 Datasheet HTML 3Page - Microsemi Corporation SM645 Datasheet HTML 4Page - Microsemi Corporation  
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SM645/SM646/SM647
4/90 Rev 1.1 2/94
LINFINITY Microelectronics Inc.
Copyright
© 1994
11861 Western Avenue
∞ Garden Grove, CA 92841
2
(714) 898-8121
∞ FAX: (714) 893-2570
ABSOLUTE MAXIMUM RATINGS (Note 1)
150
°C
-65
°C to 150°C
300
°C
Operating Junction Temperature
Hermetic (K Package) ..................................................
Storage Temperature Range .............................
Lead Temperature (Soldering, 10 Seconds) ...................
2.0
°C/W
2.0
°C/W
30.0
°C/W
Thermal Resistance
Power Switch,
θ
J - C ...................................................
Commutating Diode .................................................
Case to Ambient,
θ
C - A ............................................
Note 1. Exceeding these ratings could cause damage to the device.
K Package:
Thermal Resistance-Junction to Case,
θ
JC .................. 2.0°C/W
Thermal Resistance-Junction to Ambient,
θ
JA .............. 35°C/W
THERMAL DATA
Note A. Junction Temperature Calculation: T
J
= T
A
+ (P
D
x
θ
JA
).
Note B. The above numbers for
θ
JC are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The
θ
JA numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
Operating Ambient Temperature Range
SM6XXK ....................................................... 0
°C to 70°C
SM6XXHRK ............................................ -55
°C to 125°C
Note 2. Range over which the device is functional.
RECOMMENDED OPERATING CONDITIONS (Note 2)
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating ambient temperature of T
A = 25°C.
Low duty cycle pulse testing tech-
niques are used which maintains junction and case temperatures equal to the ambient temperature.)
I
4 = 7A(-7A), I3 = -30mA(30mA)
I
4 = 15A(-15A), I3 = -30mA(30mA)
I
4 = 7A(-7A)
I
4 = 15A(-15A)
V
4 = Rated input voltage
V
4 = Rated input voltage, TA = 125 °C
V
1 = Rated output voltage
V
1 = Rated output voltage, TA = 125 °C
On-State Voltage (Note 3)
Diode Forward Voltage (Note 3)
Off-State Current
Diode Reverse Current
Test Conditions
Parameter
Units
Note 3. Pulse test: Duration = 300
µs, Duty Cycle ≤ 2%.
V
V
V
V
µA
µA
µA
µA
1.5
3.5
1.25
1.75
10
10
1.0
2.5
0.85
0.95
0.1
10
1.0
500
SG645/646/647
Min.
Typ. Max.
SM645
SM646
SM647
Input Voltage, V
4 - 2 ..........................................
50V
70V
90V
Output Voltage, V
1 - 2 .......................................
50v
70v
90V
Drive Input Reverse Voltage, V
3 - 4 ..................
4V
4V
4V
Output Current, I
1 ...........................................
13A
13A
13A
Drive Current, I
3 ..............................................
-0.3A
-0.3A
-0.3A
SM645
SM646
SM647
Input Voltage, V
4 - 2 .........................................
60V
80V
100V
Output Voltage, V
1 - 2 ......................................
60v
80v
100V
Drive Input Reverse Voltage, V
3 - 4 ................
5V
5V
5V
Continuous Output Current, I
1 .......................
15A
15A
15A
Peak Output Current .....................................
20A
20A
20A
Drive Current, I
3 ............................................
-0.4A
-0.4A
-0.4A



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