NPN SILICON POWER TRANSISTOR

CSD880

TO-220

Audio Frequency Power Amplifier Applications.

Complementary CSB834

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

60

V

Collector -Emitter Voltage

VCEO

60

V

Emitter- Base Voltage

VEBO

7.0

V

Collector Current

IC

3.0

A

Base Current

IB

0.5

A

Power Dissipation @ Ta=25 deg C

PC

1.5

W

Power Dissipation @ Tc=25 deg C

30

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICBO

VCB=60V, IE=0

-

-

100

uA

Emitter Cut off Current

IEBO

VEB=7V, IC=0

-

-

100

uA

Collector Emitter Voltage

VCEO

IC=50mA, IB=0

60

-

-

V

DC Current Gain

hFE

IC=0.5A, VCE=5V

60

-

300

Collector Emitter Saturation Voltage

VCE(Sat)

IC=3A, IB=0.3A

-

-

1.0

V

Base Emitter on Voltage

VBE(on)

IC=0.5A, VCE=5V

-

-

1.0

V

Dynamic Characteristics

Transition Frequency

ft

VCE=5V,IC=0.5A,

-

3.0

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

70

-

pF

f=1MHz

Switching Time

Turn-0n Time

ton

VCC=30V,

-

0.8

-

us

Storage Time

tstg

IB1=IB2=0.2A,

-

1.5

-

us

Fall Time

tf

Pulse Width=20us

-

0.8

-

us

Duty Cycle=1%

hFE CLASSIFICATION:-

O : 60 -120,

Y : 100 -200,

GR : 150-300

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company