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TIP33C 数据表(PDF) 2 Page - ON Semiconductor

部件名 TIP33C
功能描述  COMPLEMENTARY SILICON POWER TRANSISTORS
PDF  4 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

TIP33C 数据表(HTML) 2 Page - ON Semiconductor

  TIP33C Datasheet HTML 1Page - ON Semiconductor TIP33C Datasheet HTML 2Page - ON Semiconductor TIP33C Datasheet HTML 3Page - ON Semiconductor TIP33C Datasheet HTML 4Page - ON Semiconductor  
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TIP33B TIP33C TIP34B TIP34C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mA, IB = 0)
TIP33B, TIP34B
TIP33C, TIP34C
VCEO(sus)
80
100
—
—
Vdc
Collector–Emitter Cutoff Current
(VCE = 60 V, IB = 0)
TIP33B, TIP33C, TIP34B, TIP34C
ICEO
—
0.7
mA
Collector–Emitter Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
—
0.4
mA
Emitter–Base Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
—
1.0
mA
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1.0 A, VCE = 4.0 V)
(IC = 3.0 A, VCE = 4.0 V)
hFE
40
20
—
100
—
Collector–Emitter Saturation Voltage
(IC = 3.0 A, IB = 0.3 A)
(IC = 10 A, IB = 2.5 A)
VCE(sat)
—
—
1.0
4.0
Vdc
Base–Emitter On Voltage
(IC = 3.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
VBE(on)
—
—
1.6
3.0
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)
hfe
20
—
—
Current–Gain — Bandwidth Product
(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)
fT
3.0
—
MHz
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle v 2.0%.
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
20
1.0
50
100
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
1.0
0.1
2.0
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
1.0 ms
dc
300
µs
5.0
3.0
15
10
10 ms
0.2
0.5
2.0
3.0
5.0 7.0
30
70
TC = 25°C
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
60
0
80
100
Figure 3. Maximum Rated Forward Bias
Safe Operating Area
0
10
15
20
5.0
20
40
TIP33B
TIP34B
TIP33C
TIP34C
TIP33B
TIP34B
TIP33C
TIP34C
L = 200
µH
IC/IB ≥ 5.0
VBE(off) = 0 to 5.0 V
TC = 100°C
FORWARD BIAS
The Forward Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during forward bias. The data is based on TC = 25_C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be der-
ated thermally for TC > 25_C.
REVERSE BIAS
The Reverse Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during reverse biased turn–off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.



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