HBG010D360D datasheet(1/2 Pages) GETEDZ

部件名	HBG010D360D

功能描述	Half Bridge High Voltage Rectifier Assembly

PDF	2 Pages

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制造商	GETEDZ [GETAI ELECTRONICS DEVICE CO., LTD]

网页	http://www.hvgtsemi.com

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HBG010D360D

1.0A 36kV

Half Bridge High Voltage Rectifier Assembly

----------------------------------------------------------------------------------------------------------------------------- ------

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2019-03 1 / 2

INTRODUCE:

HVGT Half Bridge high voltage silicon rectifier

assembly is made of high quality silicon GPP chip

and high reliability epoxy resin sealing structure,

and through professional testing equipment

inspection qualified after to customers.

FEATURES:

1. High reliability design.

2. High voltage design.

3. Power frequency ratio.

4. Conform to RoHS and SGS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage generator.

2. Industrial microwave power supply.

3. High voltage rectifier used in electrostatic

cleaning.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: screw holes M5.

3. Net weight: 145.0 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: HVD-31

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

Repetitive Peak Renerse Voltage

VRRM

TA=25°C; IR=1.0uA

36

kV

Peak Working Revere Voltage

VRWM

TA=25°C; IR=1.0uA

36

kV

Non-Repetitive Peak Renerse Voltage

VRSM

TA=25°C; IR=1.0uA

40

kV

Average Forward Current Maximum

IFAVM

TA=50°C; 50Hz Half-sine Wave;

Resistance load

1.0

A

Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 50Hz Half-Sine Wave; 8.3mS

30

A

Junction Temperature

TJ

150

°C

Allowable Operation Case Temperature

Tc

-40~+150

°C

Storage Temperature

TSTG

-40~+150

°C

ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)

Items

Symbols

Condition

Data value

Units

Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

64

V

Maximum Reverse Current

IR1

at 25°C; at VRRM

5.0

uA

IR2

at 100°C; at VRRM

50

uA

Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

--

nS

Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

--

pF

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HBG010D360D 数据表(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD

HBG010D360D 数据表(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD

类似零件编号 - HBG010D360D

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类似零件编号 - HBG010D360D

类似说明 - HBG010D360D

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