Philips Semiconductors

Preliminary specification

TOPFET high side switch

PIP3206-R

SMD version

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

BG

Continuous off-state supply voltage

0

50

V

I

L

Continuous load current

T

-

10

A

P

D

Total power dissipation

T

-

115

W

T

stg

Storage temperature

-55

175

˚C

T

j

Continuous junction temperature

1

-

150

˚C

T

sold

Mounting base temperature

during soldering

-

260

˚C

Reverse battery voltages

2

-V

BG

Continuous reverse voltage

-

16

V

-V

BG

Peak reverse voltage

-

32

V

Application information

R

External resistors

3

to limit input, status currents

3.2

-

k

Ω

Input and status

I

Continuous currents

-5

5

mA

I

Repetitive peak currents

δ ≤ 0.1, tp = 300 µs

-50

50

mA

Inductive load clamping

I

E

BL

Non-repetitive clamping energy

T

-

460

mJ

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor

Human body model;

-

2

kV

voltage

C = 250 pF; R = 1.5 k

Ω

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Thermal resistance

4

R

th j-mb

Junction to mounting base

-

-

0.86

1.08

K/W

1 For normal continuous operation. A higher T

to protect the switch.

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must

limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T

j

rating must be observed.

3 To limit currents during reverse battery and transient overvoltages (positive or negative).

4 Of the output power MOS transistor.

October 2001

2

Rev 1.000