NCE65R360D datasheet(3/8 Pages) VBSEMI

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Coss and Eoss vs. VDS

VDS, Drain-to-Source Voltage (V)

J = 25 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

5 V

VDS, Drain-to-Source Voltage (V)

010

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

5 V

J = 150 °C

515

VGS, Gate-to-Source Voltage (V)

010

515

J = 25 °C

J = 150 °C

DS = 29.6 V

TJ, Junction Temperature (°C)

2.5

0.5

- 60

1.5

- 40 - 20 0

20 40 60 80 100 120 140 160

GS = 10 V

D = 11 A

VDS, Drain-to-Source Voltage (V)

100

200

400

10 000

1000

100

300

500

600

iss

oss

rss

GS = 0 V, f = 1 MHz

iss = Cgs + Cgd, Cds Shorted

rss = Cgd

oss = Cds + Cgd

500

5000

100

200

300

400

500

600

oss

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NCE65R360D

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