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REF70 数据表(PDF) 10 Page - Texas Instruments

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部件名 REF70
功能描述  REF70 Ultra-High-Precision Voltage Reference with Low Noise and Low Drift
PDF  20 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

REF70 数据表(HTML) 10 Page - Texas Instruments

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8.2 Long-Term Stability
One of the key parameters of the REF70 references is long-term stability. Typical characteristic expressed as:
curves shows the typical drift value for the REF70 VOUT FKH is 18 ppm from 0 to 250 hours. It is important to
understand that long-term stability is not ensured by design and that the output from the device may shift beyond
the typical 18 ppm specification at any time. For systems that require highly stable output voltages over long
periods of time, the designer should consider burning in the devices prior to use to minimize the amount of
output drift exhibited by the reference over time.
Time (Hr)
0
50
100
150
200
250
-40
-30
-20
-10
0
10
Figure 8-2. Long Term Stability FKH -250 hours (VOUT)
8.3 Thermal Hysteresis
Thermal hysteresis is measured with the REF70 soldered to a PCB, similar to a real-world application. Thermal
hysteresis for the device is defined as the change in output voltage after operating the device at 25°C, cycling
the device through the specified temperature range, and returning to 25°C. The PCB was baked at 150°C for 30
minutes before thermal hysteresis was measured. Hysteresis can be expressed by Equation 1:
6
PRE
POST
HYST
NOM
| V
V
|
V
10
ppm
V
§
·
u
¨
¸
©
¹
(1)
where
• VHYST = thermal hysteresis (in units of ppm)
• VNOM = the specified output voltage
• VPRE = output voltage measured at 25°C pre-temperature cycling
• VPOST = output voltage measured after the device has cycled from 25°C through the specified temperature
range of –40°C to +125°C and returns to 25°C.
8.4 Power Dissipation
The REF70 voltage references are capable of source and sink up to 10 mA of load current across the rated input
voltage range. However, when used in applications subject to high ambient temperatures, the input voltage and
load current must be carefully monitored to ensure that the device does not exceeded its maximum power
dissipation rating. The maximum power dissipation of the device can be calculated with Equation 2:
J
A
D
JA
T
T
P
R
T
u
(2)
where
• PD is the device power dissipation
• TJ is the device junction temperature
• TA is the ambient temperature
• RθJA is the package (junction-to-air) thermal resistance
REF70
SNAS781 – OCTOBER 2020
www.ti.com
10
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Copyright © 2020 Texas Instruments Incorporated
Product Folder Links: REF70



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