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AM4530C 数据表(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 AM4530C
功能描述  N-Channel and P-Channel MOSFET use advanced trench Technology
PDF  8 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AM4530C 数据表(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  AM4530C Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AM4530C Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AM4530C Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AM4530C Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AM4530C Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AM4530C Datasheet HTML 6Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AM4530C Datasheet HTML 7Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. AM4530C Datasheet HTML 8Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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On state drain current
www.doingter.cn
—
3 —
Qg
Total Gate Charge
VGS=10V, VDS=15V,
ID=6A
13.84
nC
---
6.74
---
nC
Qgs
Gate-Source
Charge
---
1.82
---
nC
Qgd
Gate-Drain “Miller” Charge
---
3.2
---
nC
Drain-Source Diode Characteristics
Qrr
Reverse Recovery Charge
7.8
NC
P-Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=-0V,ID=250μA
-30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-24V
---
---
-1
VGS=0V, VDS=-24V
---
---
-5
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-
-0.7
-1.3
V
ID
VGS=-5V, VDS=-4.5V
6
---
---
RDS(ON)
Drain-Source On Resistance
VGS=-10V,ID=-6A
---
52
65
mΩ
VGS=-4.5V,ID=-5A
---
59
75
GFS
Forward Transconductance
-5V, ID=-5A
---
12
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=-15V, VGS=0V, f=1MHz
---
920
---
pF
Coss
Output Capacitance
---
190
---
Crss
Reverse Transfer Capacitance
---
122
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=-15V, ID=-6A,
RGEN=3Ω,VGS=-10V
---
7.7
---
ns
tr
Rise Time
---
5.7
---
ns
td(off)
Turn-Off Delay Time
---
20.2
---
ns
---
---
---
---
---
---
---
IF=6A
dI/dt=100A/μs
0.5
VDS=
A
AM 4530C



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