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2SA921 数据表(PDF) 1 Page - Panasonic Semiconductor

部件名 2SA921
功能描述  Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
PDF  2 Pages
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制造商  PANASONIC [Panasonic Semiconductor]
网页  http://www.panasonic.com/industrial/
标志 PANASONIC - Panasonic Semiconductor

2SA921 数据表(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SA921
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
s Features
q
High collector to emitter voltage VCEO.
q
Low noise voltage NV.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±0.2
4.0
±0.2
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
1.27
2.54
±0.15
2
13
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–120
–120
–5
–50
–20
250
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
NV
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –2mA
IC = –20mA, IB = –2mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –40V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function FLAT
min
–120
–120
–5
180
typ
200
max
–100
–1
520
– 0.6
150
Unit
nA
µA
V
V
V
V
MHz
mV
*h
FE Rank classification
Rank
R
S
hFE
180 ~ 360
260 ~ 520


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