FTK2012 datasheet(1/4 Pages) FS

部件名	FTK2012

功能描述	N-Channel MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	FS [First Silicon Co., Ltd]

网页	http://www.firstsilicon.co.kr/

标志

1 / 4 page

2014. 10. 10

1/4

SEMICONDUCTOR

TECHNICAL DATA

FTK2012

Revision No : 0

N-Channel MOSFET

1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

DFNWB2 ×2-6L-J

V(BR)DSS

RDS(on)MAX

ID

20V

11mΩ@ 4.5V

12A

13mΩ@ 2.5V

16mΩ@1.8V

22mΩ@1.5V

41mΩ@1.2V

FEATURES

APPLICATION

MARKING:

Equivalent Circuit

 TrenchFET Power MOSFET

 Small package DFNWB2×2-6L-J

 Load Switch for Portable Applications

ABSOLUTE MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol Para

meter

Value

Unit

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±10

V

ID

Continuous Drain Current (note 1)

12

A

IDM

Collector Current-Pulse(Note3)

40

A

RθJA

Thermal Resistance from Junction to Ambient (note 2)

167

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

TL

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

260

℃

类似零件编号 - FTK2012

制造商	部件名	数据表	功能描述
First Silicon Co., Ltd	FTK2010TSSOP	371Kb / 6P	N-Channel Enhancement Mode Power MOSFET

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