IPB65R190CFD7A datasheet(1/14 Pages) INFINEON

部件名	IPB65R190CFD7A

功能描述	650V CoolMOS짧 CFD7A SJ Power Device

PDF	14 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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1

IPB65R190CFD7A

Rev.2.0,2020-08-27

Final Data Sheet

1

2

3

tab

D²PAK

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

*1

*2

*1: Internal body diode

*2: Integrated ESD diode

MOSFET

650VCoolMOSªCFD7ASJPowerDevice

650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleading

automotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothe

well-knownattributesofhighqualityandreliabilityrequiredbythe

automotiveindustry,thenewCoolMOS™CFD7Aseriesprovidesforan

integratedfastbodydiodeandcanbeusedforPFCandresonant

switchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC.

Features

•Latest650Vautomotivequalifiedtechnologywithintegratedfastbody

diodeonthemarketfeaturingultralowQrr

•LowestFOMRDS(on)*QgandRDS(on)*Eoss

•100%avalanchetested

•Best-in-classRDS(on)inSMDandTHDpackages

Benefits

•Optimizedforhigherbatteryvoltagesupto475Vthankstofurther

improvedrobustness

•Lowerswitchinglossesenablinghigherswitchingfrequencies

•Highqualityandreliability

•Increasedefficiencyinlightloadandfullloadconditions

Potentialapplications

SuitableforPFCandDC-DCstagesfor:

•UnidirectionalandbidirectionalDC-DCconverters,

•On-BoardbatteryChargers

Productvalidation

QualifiedaccordingtoAECQ101

Pleasenote:Forproductionpartapprovalprocess(PPAP)releasewe

proposetoshareapplicationrelatedinformationduringanearlydesign

phasetoavoiddelaysinPPAPrelease.PleasecontactInfineonsales

office.

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS

650

V

RDS(on),max

190

m

Ω

Qg,typ

28

nC

ID,pulse

55

A

Eoss @ 400V

3.7

µJ

Body diode diF/dt

1300

A/µs

Type/OrderingCode

Package

Marking

RelatedLinks

IPB65R190CFD7A

PG-TO263-3

65A190F7

see Appendix A

类似零件编号 - IPB65R190CFD7A

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPB65R190CFD	6Mb / 20P	Metal Oxide Semiconduvtor Field Effect Transistor 2011-05-05 revision:2.2
	IPB65R190CFD	6Mb / 20P	650V CoolMOS C6 CFD POWER Transistor 2011-05-05 revision:2.2
	IPB65R190CFD	3Mb / 20P	Metal Oxide Semiconductor Field Effect Transistor 2011-09-26 revision:2.7
Inchange Semiconductor ...	IPB65R190CFD	189Kb / 2P	Isc N-Channel MOSFET Transistor
Infineon Technologies A...	IPB65R190CFDA	2Mb / 16P	Metal Oxide Semiconductor Field Effect Transistor 2012-07-12 revision 2.0

More results

类似说明 - IPB65R190CFD7A

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPBE65R190CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2020-08-27
	IPW65R190CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2020-08-27
	IPWS65R050CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2020-06-08
	IPB65R075CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2021-06-15
	IPB65R145CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2021-06-15
	IPP65R075CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2021-06-15
	IPP65R145CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2021-06-15
	IPW65R022CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2021-05-21
	IPWS65R022CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2021-05-21
	IPWS65R035CFD7A	1Mb / 14P	650V CoolMOS짧 CFD7A SJ Power Device Rev.2.0,2020-06-08

More results

IPB65R190CFD7A 数据表(PDF) 1 Page - Infineon Technologies AG

IPB65R190CFD7A 数据表(HTML) 1 Page - Infineon Technologies AG

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