C30T03QL datasheet(1/6 Pages) NIEC

部件名	C30T03QL

功能描述	Schottky Barrier Diode

PDF	6 Pages

Scroll/Zoom	100%

制造商	NIEC [Nihon Inter Electronics Corporation]

网页	http://www.niec.co.jp

标志

1 / 6 page

SBD Type :

C

C30

30

30T03QL

T03QL

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight: 1.4g

Rating

Symbol

C30T03QL

Unit

Repetitive Peak Reverse Voltage

VRRM

30

V

Repetitive Peak Surge Reverse Voltage

VRRSM

35(pulse width

≤ 1µs

duty

≤ 1/50)

V

Average Rectified Output Current

IO

30

Tc=105

°C

50 Hz Full Sine Wave

Resistive Load

A

RMS Forward Current

IF(RMS)

33.3

A

Surge Forward Current

IFSM

250

50Hz Full Sine Wave ,1cycle

Non-repetitive

A

Operating JunctionTemperature Range

Tjw

-40 to +150

°C

Storage Temperature Range

Tstg

-40 to +150

°C

Electrical

• Thermal Characteristics

Characteristics

Symbol

Conditions

Min.

Typ.

Max.

Unit

Peak Reverse Current

IRM

Tj= 25

°C, VRM= VRRM

per arm

-

15

mA

Peak Forward Voltage

VFM

Tj= 25

°C, IFM= 15A

per arm

-

0.49

V

Thermal Resistance

Rth(j-c) Junction to Case

-

1.5

°C /W

FEATURES

*SQUARE-PAK TO-263AB(SMD)

Packaged in 24mm Tape and Reel

*Dual Diodes – Cathode Common

*Low Forward Voltage Drop

*High Surge Capability

*Tj=150

°C operation

类似零件编号 - C30T03QL

制造商	部件名	数据表	功能描述
National Instruments Co...	C30T03QL	135Kb / 1P	SBD
Nihon Inter Electronics...	C30T03QL-11A	55Kb / 6P	Schottky Barrier Diode
National Instruments Co...	C30T03QL-11A	139Kb / 1P	SBD
Nihon Inter Electronics...	C30T03QLH	52Kb / 6P	Schottky Barrier Diode
National Instruments Co...	C30T03QLH	134Kb / 1P	SBD

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