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SMA6T14CAY 数据表(PDF) 4 Page - STMicroelectronics |
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SMA6T14CAY 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 13 page ![]() 1.1 Characteristics (curves) Figure 3. Relative variation of peak power versus initial junction temperature 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 175 % T (°C) j 10/1000 µs Figure 4. Maximum peak pulse power versus exponential pulse duration P PP(kW) 0.1 1.0 10.0 0.01 0.10 1.00 10.00 Tj initial = 25 °C tP(ms) Figure 5. Maximum clamping voltage versus peak pulse current exponential waveform 0.1 1.0 10.0 100.0 1000.0 1 10 100 1000 IPP(A) 10/1000 µs Tj initial=25 °C 8/20 µs V CL(V) V CL(V) Figure 6. Dynamic resistance versus pulse duration 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 R D(Ω) SMA6T82AY/CAY SMA6T56AY/CAY SMA6T15AY/CAY SMA6T6V7AY/CAY t P(ms) Figure 7. Junction capacitance versus reverse applied voltage for unidirectional types C(pF) 10 100 1000 10000 1 10 100 1000 f =1 MHz VOSC=30 mVRMS Tj=25 °C SMA6T6V7AY SMA6T30AY SMA6T82AY V (V) R Figure 8. Junction capacitance versus reverse applied voltage for bidirectional types C(pF) 10 100 1000 10000 1 1 0 100 1000 f =1 MHz VOSC=30 mVRMS Tj=25 °C SMA6T6V7CAY SMA6T30CAY SMA6T82CAY V (V) R SMA6TY Characteristics (curves) DS6931 - Rev 8 page 4/13 |
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