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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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STM32G47PBY3TR 数据表(PDF) 179 Page - STMicroelectronics |
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STM32G47PBY3TR 数据表(HTML) 179 Page - STMicroelectronics |
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179 / 229 page  DS12712 Rev 3 179/229 STM32G473xB STM32G473xC STM32G473xE Electrical characteristics 194 Figure 42. Asynchronous multiplexed PSRAM/NOR read waveforms Table 92. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings(1)(2) 1. CL = 30 pF. 2. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9 THCLK - 1 9 THCLK + 1 ns tw(NWE) FMC_NWE low time 6 THCLK - 1 6 THCLK + 1 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 7 THCLK + 17 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 7 THCLK + 17 - NBL Data FMC_ NBL[1:0] FMC_ AD[15:0] tv(BL_NE) th(Data_NE) Address FMC_ A[25:16] tv(A_NE) FMC_NWE t v(A_NE) MS32755V1 Address FMC_NADV t v(NADV_NE) tw(NADV) tsu(Data_NE) th(AD_NADV) FMC_ NE FMC_NOE tw(NE) tw(NOE) tv(NOE_NE) t h(NE_NOE) th(A_NOE) th(BL_NOE) tsu(Data_NOE) th(Data_NOE) FMC_NWAIT tsu(NWAIT_NE) th(NE_NWAIT) |
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