STM32G474PBY3TR datasheet(86/236 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32G474xB STM32G474xC STM32G474xE

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DS12288 Rev 5

5.3.2

Operating conditions at power-up / power-down

The parameters given in Table 18 are derived from tests performed under the ambient

temperature condition summarized in Table 17.

5.3.3

Embedded reset and power control block characteristics

The parameters given in Table 19 are derived from tests performed under the ambient

temperature conditions summarized in Table 17: General operating conditions.

Table 18. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

µs/V

VDDA fall time rate

∞

Table 19. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

tRSTTEMPO(2)

Reset temporization after

BOR0 is detected

VDD rising

250

400

μs

VBOR0(2)

Brown-out reset threshold 0

Rising edge

1.62

1.66

1.7

Falling edge

1.6

1.64

1.69

VBOR1

Brown-out reset threshold 1

Rising edge

2.06

2.1

2.14

Falling edge

1.96

2.04

VBOR2

Brown-out reset threshold 2

Rising edge

2.26

2.31

2.35

Falling edge

2.16

2.20

2.24

VBOR3

Brown-out reset threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VBOR4

Brown-out reset threshold 4

Rising edge

2.85

2.90

2.95

Falling edge

2.76

2.81

2.86

VPVD0

Programmable voltage

detector threshold 0

Rising edge

2.1

2.15

2.19

Falling edge

2.05

2.1

VPVD1

PVD threshold 1

Rising edge

2.26

2.31

2.36

Falling edge

2.15

2.20

2.25

VPVD2

PVD threshold 2

Rising edge

2.41

2.46

2.51

Falling edge

2.31

2.36

2.41

VPVD3

PVD threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

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