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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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STM32G474PBY3TR 数据表(PDF) 123 Page - STMicroelectronics |
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STM32G474PBY3TR 数据表(HTML) 123 Page - STMicroelectronics |
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123 / 236 page  DS12288 Rev 5 123/236 STM32G474xB STM32G474xC STM32G474xE Electrical characteristics 200 Figure 24. HSI48 frequency versus temperature Low-speed internal (LSI) RC oscillator NT jitter Next transition jitter Accumulated jitter on 28 cycles(4) -- +/-0.15(2) -ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(4) -- +/-0.25(2) -ns 1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. Jitter measurement are performed without clock source activated in parallel. Table 45. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI Frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs Table 44. HSI48 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MSv40989V1 -6 -4 -2 0 2 4 6 -50 -30 -10 10 30 50 70 90 110 130 Avg min max °C % |
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