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STM32L552CEU6PTR 数据表(PDF) 211 Page - STMicroelectronics |
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STM32L552CEU6PTR 数据表(HTML) 211 Page - STMicroelectronics |
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211 / 340 page ![]() DS12737 Rev 6 211/340 STM32L552xx Electrical characteristics 307 5.3.7 Wakeup time from low-power modes and voltage scaling transition times The wakeup times given in Table 83 are the latency between the event and the execution of the first user instruction. The device goes in low-power mode after the WFE (wait for event) instruction. Table 83. Low-power mode wakeup timings(1) - Parameter Conditions Typ Max Unit Sleep Wakeup time from Sleep mode to Run mode -14 17 Number of CPU cycles Wakeup time from Low- power sleep mode to Low- power run mode Sleep Power Down (SLEEP_PD=1 in FLASH_ACR) and with clock MSI = 2 MHz 14 17 Stop 0 Flash Range 1 MSI48 5.83 6.26 µs HSI16 5.23 5.46 Range 2 MSI24 18.48 18.96 HSI16 17.56 17.94 MSI4 23.36 24.59 SRAM1 Range 1 MSI48 1.79 2.16 HSI16 2.79 3.01 Range 2 MSI24 2.43 2.82 HSI16 2.80 3.03 MSI4 9.66 10.88 Stop 1 Flash Range 1 MSI48 9.74 10.22 HSI16 9.22 9.67 Range 2 MSI24 21.84 22.63 HSI16 20.98 21.81 MSI4 25.48 26.34 SRAM1 Range 1 MSI48 5.58 5.95 HSI16 6.68 7.06 Range 2 MSI24 5.69 6.24 HSI16 6.18 6.88 MSI4 11.04 11.99 Flash Low Power Run (LPR=1) MSI2 81.2 82.5 SRAM1 17.8 19 |
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