STM32L552CEU6PTR datasheet(301/340 Pages) STMICROELECTRONICS

部件名	STM32L552CEU6PTR

功能描述	Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU, 165 DMIPS, up to 512 KB Flash memory, 256 KB SRAM, SMPS

PDF	340 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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301 / 340 page

DS12737 Rev 6

301/340

STM32L552xx

Electrical characteristics

307

tw(CS)

Chip select

high time

-3×t(CK)

tv(DQ)

Data input

valid time

tv(DS)

Data strobe

input valid time

th(DS)

Data strobe

input hold time

-0

tv(RWDS)

Data strobe

output valid

time

3×t(CK)

tsr(DQ),tsf(DQ)

Data input

setup time

Voltage ranges 0/1

-0.75

t(CK)/2

-5.75(4)

Voltage range 2

-2.25

t(CK)/2

-8(4)

thr(DQ),thf(DQ)

Data input hold

time

Voltage ranges 0/1

3.75

Voltage range 2

4.75

tvr(OUT),

tvf(OUT)

Data output

valid time

Voltage

ranges 0/1

DHQC=

-5.75

7.75

DHQC=

Pres=1,

2…

Tpclk/4

+0.75

Tpclk/4

+2.5

Voltage range 2

DHQC=0

-8

thr(OUT),

thf(OUT)

Data output

hold time

Voltage

ranges 0/1

DHQC=

3.25

DHQC=

Pres=1,

2…

Tpclk/4

-0.25

Voltage range 2

DHQC=0

6.5

1. Guaranteed by characterization results.

2. Maximum frequency values are given for a RWDS to DQ skew of maximum +/-1.0 ns.

3. (PA3/PF11), (PF10/PB12), (PF10/PB5), (PE10/PF11), (PA3/PE9) and (PE10/PB5) clk/clk# pair usage is recommended in

order to respect HyperMemory AC differential crossing voltage margins.

4. Data input setup time maximum does not take into account the data level switching duration.

Table 148. OCTOSPI characteristics in DTR mode (with DQS)(1)/Octal and HyperBus (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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