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STM32L412RBI6XXX 数据表(PDF) 155 Page - STMicroelectronics |
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STM32L412RBI6XXX 数据表(HTML) 155 Page - STMicroelectronics |
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155 / 192 page ![]() DS12469 Rev 8 155/192 STM32L412xx Electrical characteristics 164 6.3.21 Temperature sensor characteristics en Voltage noise density Normal mode at 1 kHz, Output loaded with 4 kΩ -500 - nV/√Hz Low-power mode at 1 kHz, Output loaded with 20 kΩ -600 - Normal mode at 10 kHz, Output loaded with 4 kΩ -180 - Low-power mode at 10 kHz, Output loaded with 20 kΩ -290 - IDDA(OPAMP)(3) OPAMP consumption from VDDA Normal mode no Load, quiescent mode - 120 260 µA Low-power mode - 45 100 1. Guaranteed by design, unless otherwise specified. 2. The temperature range is limited to 0 °C-125 °C when VDDA is below 2 V 3. Guaranteed by characterization results. 4. Mostly I/O leakage, when used in analog mode. Refer to Ilkg parameter in Table 69: I/O static characteristics. 5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 Table 82. OPAMP characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 83. TS characteristics Symbol Parameter Min Typ Max Unit TL(1) VTS linearity with temperature - ±1 ±2 °C Avg_Slope(2) Average slope 2.3 2.5 2.7 mV/°C V30 Voltage at 30°C (±5 °C)(3) 0.742 0.76 0.785 V tSTART (TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4) -8 15 µs tSTART(1) Start-up time when entering in continuous mode(4) -70 120 µs tS_temp(1) ADC sampling time when reading the temperature 5 - - µs IDD(TS)(1) Temperature sensor consumption from VDD, when selected by ADC -4.7 7 µA 1. Guaranteed by design. 2. Guaranteed by characterization results. 3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 8: Temperature sensor calibration values. 4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes. |
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