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STM32L412RBI6XXX 数据表(PDF) 20 Page - STMicroelectronics |
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STM32L412RBI6XXX 数据表(HTML) 20 Page - STMicroelectronics |
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20 / 192 page ![]() Functional overview STM32L412xx 20/192 DS12469 Rev 8 Figure 2. Power supply overview During power-up and power-down phases, the following power sequence requirements must be respected: • When VDD is below 1 V, other power supplies (VDDAVDDUSB) must remain below VDD + 300 mV. • When VDD is above 1 V, all power supplies are independent. During the power-down phase, VDD can temporarily become lower than other supplies only if the energy provided to the MCU remains below 1 mJ; this allows external decoupling capacitors to be discharged with different time constants during the power-down transient phase. MS49685V1 Low voltage detector VDDA VDDA domain VSS VDD VBAT A/D converters Comparators Operational amplifiers Voltage reference buffer VDD domain I/O ring VSSA Reset block Temp. sensor PLL, HSI, MSI, HSI48 Standby circuitry (Wakeup logic, IWDG) Voltage regulator VDDIO1 LSE crystal 32 K osc BKP registers RCC BDCR register RTC Backup domain Core Memories Digital peripherals VCORE domain VCORE USB transceivers VDDUSB VSS VDD12 |
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