STM32L412RBT3XXX datasheet(97/192 Pages) STMICROELECTRONICS

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Table 41. Current consumption in Sleep, Flash ON and power supplied by external SMPS

(VDD12 = 1.10 V)

Symbol

Parameter

Conditions(1)

TYP

Unit

-fHCLK

25 °C

55 °C

85 °C

105 °C 125 °C

IDD_ALL(Sleep)

Supply current in sleep mode,

fHCLK = fHSE up to 48 MHz included, bypass

mode

pll ON above

48 MHz all peripherals disable

80 MHz

0.59

0.61

0.63

0.67

0.72

72 MHz

0.54

0.56

0.58

0.61

0.67

64 MHz

0.49

0.50

0.52

0.56

0.61

48 MHz

0.36

0.38

0.40

0.43

0.49

32 MHz

0.26

0.27

0.29

0.32

0.38

24 MHz

0.21

0.23

0.27

0.33

16 MHz

0.15

0.16

0.18

0.21

0.27

8 MHz

0.09

0.11

0.14

0.19

4 MHz

0.06

0.07

0.09

0.11

0.17

2 MHz

5.39

0.06

0.07

0.10

0.15

1 MHz

0.05

0.07

0.10

0.15

100 kHz

0.01

0.03

0.06

0.12

1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%,

VDD12 = 1.10 V

Table 42. Current consumption in Low-power sleep modes, Flash in power-down

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

Voltage

scaling

fHCLK

25 °C 55 °C 85 °C

105 °C 125 °C 25 °C

55 °C

85 °C 105 °C 125 °C

IDD_ALL

(LPSleep)

Supply current

in low-power

sleep mode

fHCLK = fMSI

all peripherals disable

2 MHz

105

185

350

170

300

585

µA

1 MHz

89.0

170

335

150

285

570

400 kHz

76.5

155

320

135

270

560

100 kHz

71.5

150

315

135

270

555

1. Guaranteed by characterization results, unless otherwise specified.

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