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STM32L412RBU3PXXX 数据表(PDF) 82 Page - STMicroelectronics |
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STM32L412RBU3PXXX 数据表(HTML) 82 Page - STMicroelectronics |
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82 / 192 page ![]() Electrical characteristics STM32L412xx 82/192 DS12469 Rev 8 6.3.4 Embedded voltage reference The parameters given in Table 24 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Table 24. Embedded internal voltage reference Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +130 °C 1.182 1.212 1.232 V tS_vrefint (1) ADC sampling time when reading the internal reference voltage -4(2) -- µs tstart_vrefint Start time of reference voltage buffer when ADC is enable -- 8 12(2) µs IDD(VREFINTBUF) VREFINT buffer consumption from VDD when converted by ADC - - 12.5 20(2) µA ∆VREFINT Internal reference voltage spread over the temperature range VDD = 3 V - 5 7.5(2) mV TCoeff Temperature coefficient –40°C < TA < +130°C - 30 50(2) ppm/°C ACoeff Long term stability 1000 hours, T = 25°C - 300 1000(2) ppm VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V VREFINT_DIV1 1/4 reference voltage - 24 25 26 % VREFINT VREFINT_DIV2 1/2 reference voltage 49 50 51 VREFINT_DIV3 3/4 reference voltage 74 75 76 1. The shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design. |
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