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APT50M65B2FLL 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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APT50M65B2FLL 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor APT50M65B2FLL FEATURES · Drain Current –ID= 67A@ TC=25℃ · Drain Source Voltage- : VDSS=500V(Min) · Static Drain-Source On-Resistance : RDS(on) =0.065Ω(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 67 A IDM Drain Current-Single Pluse 268 A PD Total Dissipation @TC=25℃ 694 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.18 ℃ /W |
类似零件编号 - APT50M65B2FLL |
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类似说明 - APT50M65B2FLL |
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