STPS630CSFY datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

1.1

Characteristics (curves)

Figure 1. Average forward current versus case

temperature (δ = 0.5, per diode)

100

125

150

Tc(°C)

IF(AV)(A)

δ=tp/T

Figure 2. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tP(s)

Zth(j-c) /Rth(j-c)

Single pulse

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

VR(V)

IR(mA)

Tj = 150 °C

Tj = 25 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Tj = 125 °C

Figure 4. Junction capacitance versus reverse voltage

applied (typical values, per diode)

100

1000

100

VR(V)

C(pF)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

Figure 5. Forward voltage drop versus forward current

(typical values, per diode)

0.1

1.0

10.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

VF(V)

IF(A)

Tj = -40 °C

Tj = 125 °C

Tj = 75 °C

Tj = 25 °C

Tj = 150 °C

Figure 6. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

STPS630CSFY

Characteristics (curves)

DS13539 - Rev 1

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