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STTH602CSF 数据表(PDF) 5 Page - STMicroelectronics

部件名 STTH602CSF
功能描述  200 V, dual 3 A ultrafast rectifier
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH602CSF 数据表(HTML) 5 Page - STMicroelectronics

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Figure 7. Reverse recovery charges versus dIF/dt (typical
values, per diode)
0
20
40
60
80
100
120
0
100
200
300
400
500
QRR(nC)
dIF/dt(A/µs)
V
R = 160 V
T
j = 125 °C
I
F = IF(AV)
Figure 8. Reverse recovery softness versus dIF/dt (typical
values, per diode)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
100
200
300
400
500
S FACTOR
dIF/dt(A/µs)
V
R = 160 V
T
j = 125 °C
I
F = IF(AV)
Figure 9. Relative variations of dynamic parameters
versus junction temperature
0.0
0.4
0.8
1.2
1.6
25
50
75
100
125
V
R = 160 V
I
F = IF(AV)
Reference: T
j = 125 °C
I
RM
Q
RR
S
FACTOR
Figure 10. Junction capacitance versus reverse voltage
applied (typical values, per diode)
1
10
100
1
10
100
1000
C(pF)
F = 1 MHz
V
osc= 30 mVRMS
T
j = 25 °C
VR(V)
Figure 11. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy
printed board FR4, eCu = 70 µm) (PSMC (TO-277A))
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
9
10
SCU(cm²)
Epoxy printed circuit board, copper thickness = 70 µm
Rth(j-a)(°C/W)
PSMC (TO-277A)
STTH602CSF
Characteristics (curves)
DS13550 - Rev 1
page 5/10



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